ALTUS tungsten deposition systems deliver leading productivity and technology for contact and local interconnect applications. Pulsed Nucleation Layer (PNL™) integrates a high throughput nucleation layer with chemical vapor deposition (CVD bulk deposition). Our Multi-Station Sequential Deposition (MSSD) architecture enables the nucleation layer and CVD fill to be performed within the same ALTUS chamber. During the PNL process, precisely controlled, alternating doses of reactant gases are introduced into the chamber, producing highly conformal tungsten films with improved film properties. PNL reduces nucleation layer thickness to around 50Å and extends ALTUS capability to 45nm and beyond. Furthermore, recent PNL processes can now alter CVD bulk fill grain growth and lower the overall resistivity of thin tungsten films by 20-30%.
The integrated PNL and CVD approach produces benchmark productivity (>100 wph on Concept Three Dual ALTUS) and superior production availability (>90% in high volume production) resulting in the lowest Cost of Ownership tungsten deposition solution in the industry. |

300mm ALTUS Process Module
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