Metal PVD Products

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The INOVA® delivers leading-edge PVD technology that is critical to the production of sub-32 nm logic and memory devices.

INOVA® NExT

Winner of Solid State Technology's "Top Products of 2005" award, the INOVA NExT is a 300 mm metallization system that deposits highly conformal films used for copper barrier/seed applications at 32 nm and beyond. The unique and patented HCM IONX sputtering source of the INOVA NExT enables the deposition of an extremely high quality film with the conformality, density, and coverage required to extend PVD technology to the 32nm and 22 nm technology nodes. The HCM IONX technology also results in a significant cost of consumables reduction for the barrier application, as well as an extended target life.

A version of INOVA for advanced barrier seed applications in through-silicon-via packaging is also available, the INOVA 3D

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INOVA NExT

PVD for 45 nm

The key benefits of the INOVA NExT are the technical performance, flexibility and extendibility of the hollow cathode magnetron (HCM) source. The HCM uses recipe-controlled electromagnets to alter the plasma characteristics in the source, thus enabling operation in different process regimes without changing hardware. The design of the HCM has allowed for high ionization, which provides good directionality and step coverage. An HCM module also operates in a resputter mode where etch and a low power deposition occur simultaneously. New advancements have further increased step coverage, reduced asymmetry, improved nonuniformity and enabled full-face erosion

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PVD for 45 nm