Metal PVD & iALD Products





The INOVA® delivers leading-edge PVD technology that is critical to the production of sub-90 nm logic and memory devices.


INOVA® NExT™

Winner of Solid State Technology's "Top Products of 2005" award, the INOVA NExT is a 300 mm metallization system that deposits highly conformal films used for copper barrier/seed applications at 45 nm and beyond.  The unique and patented HCM IONX sputtering source of the INOVA NExT enables the deposition of an extremely high quality film with the conformality, density, and coverage required to extend PVD technology to the 32nm and 22 nm technology nodes.  The HCM IONX technology also results in a  significant cost of consumables reduction for the barrier application, as well as an extended target life.
 INOVA NExT
INOVA NExT system
configured for PVD and
iALD
PVD for 45 nm

The key benefits of the INOVA NExT are the technical performance, flexibility and extendibility of the hollow cathode magnetron (HCM) source. The HCM uses recipe-controlled electromagnets to alter the plasma characteristics in the source, thus enabling operation in different process regimes without changing hardware. The design of the HCM has allowed for high ionization, which provides good directionality and step coverage. An HCM module also operates in a resputter mode where etch and a low power deposition occur simultaneously. New advancements have further increased step coverage, reduced asymmetry, improved nonuniformity and enabled full-face erosion.
 PVD for 45 nm
PVD for 45 nm

iALD for Sub-45 nm Barrier Deposition

The iALD process can reduce line resistivity by reducing the relative amount of barrier material in the copper conducting line. The iALD TaN barrier enables this by depositing ultrathin and highly conformal films. An iALD TaN process deposits a conducting film with a resistivity less than 300 micro-Ohm-cm, in contrast to competing thermal ALD processes that deposit an insulator. Compatibility with ultra low-k (ULK) dielectrics has been demonstrated by adhesion data that is comparable to PVD baseline and no penetration of the iALD TaN into the porous ULK films. The iALD process can also be used to deposit other metals such as ruthenium and copper, enabling an all- iALD copper barrier/seed.

 iALD for Sub-45 nm Barrier Deposition 
iALD for Sub-45 nm Barrier Deposition
Productivity and Cost of Ownership

Along with advanced process technology, the INOVA NExT continues the tradition of leading PVD productivity that was first introduced with the INOVA xT. INOVA NExT runs at greater than 75 wafers per hour (wph) net at 85 percent uptime.

Cost of consumables plays a key role in the overall cost of ownership. The INOVA NExT cost of consumables is less than $3.00 per wafer for 65/45 nm copper barrier/seed applications. The HCM incorporates a simple design and uses a single target. Competing source technologies, on the other hand, employ a complex, multi-element sputtering arrangement that is prone to arcing and yield degradation, along with increased consumables cost. With new shaped copper targets, copper seed costs will be further reduced. The combination of high productivity and low cost of consumables makes INOVA NExT the industry benchmark for cost of ownership.